Infineon Technologies - BSM75GAR120DN2HOSA1

KEY Part #: K6534541

BSM75GAR120DN2HOSA1 Pricing (USD) [1189PC Stock]

  • 1 pcs$36.38434

Nimewo Pati:
BSM75GAR120DN2HOSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT 2 MED POWER 34MM-1.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Diodes - Bridge rèktifikateur, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Arrays, Diodes - RF, Tiristors - TRIACs and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in Infineon Technologies BSM75GAR120DN2HOSA1 electronic components. BSM75GAR120DN2HOSA1 can be shipped within 24 hours after order. If you have any demands for BSM75GAR120DN2HOSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSM75GAR120DN2HOSA1 Atribi pwodwi yo

Nimewo Pati : BSM75GAR120DN2HOSA1
Manifakti : Infineon Technologies
Deskripsyon : IGBT 2 MED POWER 34MM-1
Seri : -
Estati Pati : Not For New Designs
Kalite IGBT : Trench Field Stop
Nou konte genyen : Single
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 30A
Pouvwa - Max : 235W
Vce (sou) (Max) @ Vge, Ic : 2.2V @ 15V, 15A
Kouran - Cutoff Pèseptè (Max) : 400µA
Antre kapasite (Cies) @ Vce : 1nF @ 25V
Antre : Standard
NTC thermistor : No
Operating Tanperati : -40°C ~ 175°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : Module
Pake Aparèy Founisè : Module