Nimewo Pati :
BSM75GAR120DN2HOSA1
Manifakti :
Infineon Technologies
Deskripsyon :
IGBT 2 MED POWER 34MM-1
Estati Pati :
Not For New Designs
Kalite IGBT :
Trench Field Stop
Nou konte genyen :
Single
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
30A
Vce (sou) (Max) @ Vge, Ic :
2.2V @ 15V, 15A
Kouran - Cutoff Pèseptè (Max) :
400µA
Antre kapasite (Cies) @ Vce :
1nF @ 25V
Operating Tanperati :
-40°C ~ 175°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
Module