Infineon Technologies - IRLS4030TRL7PP

KEY Part #: K6417487

IRLS4030TRL7PP Pricing (USD) [32388PC Stock]

  • 1 pcs$1.27245
  • 800 pcs$1.22162

Nimewo Pati:
IRLS4030TRL7PP
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 100V 190A D2PAK-7.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - RF, Tiristors - DIACs, SIDACs, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Single and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in Infineon Technologies IRLS4030TRL7PP electronic components. IRLS4030TRL7PP can be shipped within 24 hours after order. If you have any demands for IRLS4030TRL7PP, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRLS4030TRL7PP Atribi pwodwi yo

Nimewo Pati : IRLS4030TRL7PP
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 100V 190A D2PAK-7
Seri : HEXFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 190A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 3.9 mOhm @ 110A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 140nC @ 4.5V
Vgs (Max) : ±16V
Antre kapasite (Ciss) (Max) @ Vds : 11490pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 370W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D2PAK (7-Lead)
Pake / Ka : TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

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