Nimewo Pati :
IDK04G65C5XTMA1
Manifakti :
Infineon Technologies
Deskripsyon :
DIODE SCHOTTKY 650V 4A TO263-2
Estati Pati :
Discontinued at Digi-Key
Kalite dyòd :
Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) :
650V
Kouran - Mwayèn Rèktifye (Io) :
4A (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.8V @ 4A
Vitès :
No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) :
0ns
Kouran - Fèy Reverse @ Vr :
670µA @ 650V
Kapasite @ Vr, F :
130pF @ 1V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè :
PG-TO263-2
Operating Tanperati - Junction :
-55°C ~ 175°C