FQPF3N80C Pricing (USD) [52540PC Stock]
- 1 pcs$0.74422
- 2,000 pcs$0.18175
- Nimewo Pati:
- FQPF3N80C
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 800V 3A TO-220F.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Tiristors - TRIACs, Transistors - Objektif espesyal, Transistors - IGBTs - Single, Diodes - RF, Modil pouvwa chofè, Diodes - Varyab kapasite (Varicaps, Varactors) and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FQPF3N80C electronic components. FQPF3N80C can be shipped within 24 hours after order. If you have any demands for FQPF3N80C, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQPF3N80C Atribi pwodwi yo
Nimewo Pati :
FQPF3N80C
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 800V 3A TO-220F
Seri :
QFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
4.8 Ohm @ 1.5A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
16.5nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
705pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
39W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220F
Pake / Ka :
TO-220-3 Full Pack
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