R6009KNX Pricing (USD) [59189PC Stock]
- 1 pcs$0.72331
- 10 pcs$0.64178
- 100 pcs$0.50707
- 500 pcs$0.39322
- 1,000 pcs$0.29366
- Nimewo Pati:
- R6009KNX
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 600V 9A TO220FM.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Diodes - RF, Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - RF, Diodes - Bridge rèktifikateur and Diodes - Rèkteur - Arrays ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor R6009KNX electronic components. R6009KNX can be shipped within 24 hours after order. If you have any demands for R6009KNX, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
R6009KNX Atribi pwodwi yo
Nimewo Pati :
R6009KNX
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N-CH 600V 9A TO220FM
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
535 mOhm @ 2.8A, 10V
Vgs (th) (Max) @ Id :
5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
16.5nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
540pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
48W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220FM
Pake / Ka :
TO-220-3 Full Pack
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