IXFN180N10 Pricing (USD) [3444PC Stock]
- 1 pcs$13.20405
- 10 pcs$12.21259
- 25 pcs$11.22224
- 100 pcs$10.43009
- 250 pcs$9.57193
- 500 pcs$9.10984
- Nimewo Pati:
- IXFN180N10
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 100V 180A SOT-227B.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Diodes - Zener - Single, Diodes - Rèkteur - Arrays, Transistors - JFETs, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in IXYS IXFN180N10 electronic components. IXFN180N10 can be shipped within 24 hours after order. If you have any demands for IXFN180N10, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFN180N10 Atribi pwodwi yo
Nimewo Pati :
IXFN180N10
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 100V 180A SOT-227B
Seri :
HiPerFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
180A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
8 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs :
360nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
9100pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
600W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SOT-227B
Pake / Ka :
SOT-227-4, miniBLOC
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