IRF200P222 Pricing (USD) [5393PC Stock]
- 1 pcs$7.64174
- 400 pcs$4.79194
- Nimewo Pati:
- IRF200P222
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 200V 182A TO247AC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Single, Diodes - RF, Transistors - IGBTs - Arrays and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF200P222 electronic components. IRF200P222 can be shipped within 24 hours after order. If you have any demands for IRF200P222, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF200P222 Atribi pwodwi yo
Nimewo Pati :
IRF200P222
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 200V 182A TO247AC
Seri :
StrongIRFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
182A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
6.6 mOhm @ 82A, 10V
Vgs (th) (Max) @ Id :
4V @ 270µA
Chaje Gate (Qg) (Max) @ Vgs :
203nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
9820pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
556W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247AC
Pake / Ka :
TO-247-3
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