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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. TN0606N3-G

Microchip Technology - TN0606N3-G

KEY Part #: K6398951

TN0606N3-G Pricing (USD) [123054PC Stock]

  • 1 pcs$0.30849
  • 25 pcs$0.25755
  • 100 pcs$0.23255
Nimewo Pati:
TN0606N3-G
Manifakti:
Microchip Technology
Detaye deskripsyon:
MOSFET N-CH 60V 500MA TO92-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Tiristors - TRIACs, Diodes - Bridge rèktifikateur, Tiristors - SCR - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in Microchip Technology TN0606N3-G electronic components. TN0606N3-G can be shipped within 24 hours after order. If you have any demands for TN0606N3-G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TN0606N3-G Atribi pwodwi yo

Nimewo Pati : TN0606N3-G
Manifakti : Microchip Technology
Deskripsyon : MOSFET N-CH 60V 500MA TO92-3
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 500mA (Tj)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 3V, 10V
RD sou (Max) @ Id, Vgs : 1.5 Ohm @ 750mA, 10V
Vgs (th) (Max) @ Id : 2V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 150pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-92-3
Pake / Ka : TO-226-3, TO-92-3 (TO-226AA)
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