Vishay Semiconductor Diodes Division - AR3PJ-M3/87A

KEY Part #: K6430898

AR3PJ-M3/87A Pricing (USD) [297279PC Stock]

  • 1 pcs$0.12442
  • 6,500 pcs$0.10820

Nimewo Pati:
AR3PJ-M3/87A
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE AVALANCHE 600V 1.8A TO277A. Rectifiers 3A,600V,Fast RecoveryAvalanche SM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays, Transistors - Objektif espesyal, Tiristors - SCR - Modil yo, Diodes - Zener - Single, Tiristors - DIACs, SIDACs and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division AR3PJ-M3/87A electronic components. AR3PJ-M3/87A can be shipped within 24 hours after order. If you have any demands for AR3PJ-M3/87A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

AR3PJ-M3/87A Atribi pwodwi yo

Nimewo Pati : AR3PJ-M3/87A
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE AVALANCHE 600V 1.8A TO277A
Seri : eSMP®
Estati Pati : Active
Kalite dyòd : Avalanche
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 1.8A (DC)
Voltage - Forward (Vf) (Max) @ Si : 1.6V @ 3A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 140ns
Kouran - Fèy Reverse @ Vr : 10µA @ 600V
Kapasite @ Vr, F : 44pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : TO-277, 3-PowerDFN
Pake Aparèy Founisè : TO-277A (SMPC)
Operating Tanperati - Junction : -55°C ~ 175°C

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