FQPF22N30 Pricing (USD) [54327PC Stock]
- 1 pcs$0.72332
- 1,000 pcs$0.71972
- Nimewo Pati:
- FQPF22N30
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 300V 12A TO-220F.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - RF, Transistors - Objektif espesyal, Diodes - Zener - Single, Tiristors - SCR, Diodes - Bridge rèktifikateur and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FQPF22N30 electronic components. FQPF22N30 can be shipped within 24 hours after order. If you have any demands for FQPF22N30, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQPF22N30 Atribi pwodwi yo
Nimewo Pati :
FQPF22N30
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 300V 12A TO-220F
Seri :
QFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
300V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
12A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
160 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
60nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
2200pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
56W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220F
Pake / Ka :
TO-220-3 Full Pack
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