IRFIBF20GPBF Pricing (USD) [26796PC Stock]
- 1 pcs$1.34413
- 10 pcs$1.21369
- 100 pcs$0.92513
- 500 pcs$0.71953
- 1,000 pcs$0.59618
- Nimewo Pati:
- IRFIBF20GPBF
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 900V 1.2A TO220FP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - JFETs, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Single, Modil pouvwa chofè, Transistors - Pwogramasyon Unijunction, Diodes - Zener - Arrays and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix IRFIBF20GPBF electronic components. IRFIBF20GPBF can be shipped within 24 hours after order. If you have any demands for IRFIBF20GPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFIBF20GPBF Atribi pwodwi yo
Nimewo Pati :
IRFIBF20GPBF
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 900V 1.2A TO220FP
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
900V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.2A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
8 Ohm @ 720mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
38nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
490pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
30W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220-3
Pake / Ka :
TO-220-3 Full Pack, Isolated Tab
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