Manifakti :
ON Semiconductor
Deskripsyon :
DIODE GEN PURP 200V 1A DO41
Voltage - DC Ranvèse (Vr) (Max) :
200V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
1.2V @ 1A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
150ns
Kouran - Fèy Reverse @ Vr :
5µA @ 200V
Kapasite @ Vr, F :
12pF @ 4V, 1MHz
Mounting Kalite :
Through Hole
Pake / Ka :
DO-204AL, DO-41, Axial
Pake Aparèy Founisè :
DO-41
Operating Tanperati - Junction :
-50°C ~ 150°C