IRF1018EPBF Pricing (USD) [69274PC Stock]
- 1 pcs$0.57280
- 10 pcs$0.50799
- 100 pcs$0.40159
- 500 pcs$0.29460
- 1,000 pcs$0.23258
- Nimewo Pati:
- IRF1018EPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 60V 79A TO-220AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Arrays, Modil pouvwa chofè, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF1018EPBF electronic components. IRF1018EPBF can be shipped within 24 hours after order. If you have any demands for IRF1018EPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF1018EPBF Atribi pwodwi yo
Nimewo Pati :
IRF1018EPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 60V 79A TO-220AB
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
79A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
8.4 mOhm @ 47A, 10V
Vgs (th) (Max) @ Id :
4V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
69nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2290pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
110W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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