Toshiba Semiconductor and Storage - TK31N60W5,S1VF

KEY Part #: K6416511

TK31N60W5,S1VF Pricing (USD) [14520PC Stock]

  • 1 pcs$3.12016
  • 30 pcs$2.55900
  • 120 pcs$2.30934
  • 510 pcs$1.93484
  • 1,020 pcs$1.68518

Nimewo Pati:
TK31N60W5,S1VF
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET N-CH 600V 30.8A TO-247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Diodes - Zener - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Single, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Bridge rèktifikateur and Diodes - Varyab kapasite (Varicaps, Varactors) ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage TK31N60W5,S1VF electronic components. TK31N60W5,S1VF can be shipped within 24 hours after order. If you have any demands for TK31N60W5,S1VF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK31N60W5,S1VF Atribi pwodwi yo

Nimewo Pati : TK31N60W5,S1VF
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N-CH 600V 30.8A TO-247
Seri : DTMOSIV
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 30.8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 99 mOhm @ 15.4A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 1.5mA
Chaje Gate (Qg) (Max) @ Vgs : 105nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 3000pF @ 300V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 230W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247
Pake / Ka : TO-247-3