BSO130P03SHXUMA1 Pricing (USD) [154451PC Stock]
- 1 pcs$0.23948
- Nimewo Pati:
- BSO130P03SHXUMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET P-CH 30V 9.2A 8DSO.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Tiristors - DIACs, SIDACs, Transistors - JFETs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR - Modil yo, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - RF and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BSO130P03SHXUMA1 electronic components. BSO130P03SHXUMA1 can be shipped within 24 hours after order. If you have any demands for BSO130P03SHXUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSO130P03SHXUMA1 Atribi pwodwi yo
Nimewo Pati :
BSO130P03SHXUMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET P-CH 30V 9.2A 8DSO
Seri :
OptiMOS™
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9.2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
13 mOhm @ 11.7A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 140µA
Chaje Gate (Qg) (Max) @ Vgs :
81nC @ 10V
Vgs (Max) :
±25V
Antre kapasite (Ciss) (Max) @ Vds :
3520pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.56W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
P-DSO-8
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
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