Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
DIODE GEN PURP 200V 500MA SUBSMA
Voltage - DC Ranvèse (Vr) (Max) :
200V
Kouran - Mwayèn Rèktifye (Io) :
500mA
Voltage - Forward (Vf) (Max) @ Si :
1.3V @ 500mA
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
150ns
Kouran - Fèy Reverse @ Vr :
5µA @ 200V
Kapasite @ Vr, F :
4pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Sub SMA
Operating Tanperati - Junction :
-55°C ~ 150°C