[3548PC Stock]
- Nimewo Pati:
- PMT200EN,115
- Manifakti:
- NXP USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 100V 1.8A SC-73.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR - Modil yo, Transistors - IGBTs - Arrays, Modil pouvwa chofè, Tiristors - TRIACs, Diodes - Rèkteur - Single and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in NXP USA Inc. PMT200EN,115 electronic components. PMT200EN,115 can be shipped within 24 hours after order. If you have any demands for PMT200EN,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMT200EN,115 Atribi pwodwi yo
Nimewo Pati :
PMT200EN,115
Manifakti :
NXP USA Inc.
Deskripsyon :
MOSFET N-CH 100V 1.8A SC-73
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
235 mOhm @ 1.5A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
10nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
475pF @ 80V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
800mW (Ta), 8.3W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-223
Pake / Ka :
TO-261-4, TO-261AA
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