Infineon Technologies - DF120R12W2H3B27BOMA1

KEY Part #: K6534595

DF120R12W2H3B27BOMA1 Pricing (USD) [1688PC Stock]

  • 1 pcs$25.64829

Nimewo Pati:
DF120R12W2H3B27BOMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT MODULE 800V 50A.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Objektif espesyal, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - RF and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in Infineon Technologies DF120R12W2H3B27BOMA1 electronic components. DF120R12W2H3B27BOMA1 can be shipped within 24 hours after order. If you have any demands for DF120R12W2H3B27BOMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DF120R12W2H3B27BOMA1 Atribi pwodwi yo

Nimewo Pati : DF120R12W2H3B27BOMA1
Manifakti : Infineon Technologies
Deskripsyon : IGBT MODULE 800V 50A
Seri : -
Estati Pati : Active
Kalite IGBT : -
Nou konte genyen : Three Phase Inverter
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 50A
Pouvwa - Max : 180W
Vce (sou) (Max) @ Vge, Ic : 2.4V @ 15V, 40A
Kouran - Cutoff Pèseptè (Max) : 1mA
Antre kapasite (Cies) @ Vce : 2.35nF @ 25V
Antre : Standard
NTC thermistor : Yes
Operating Tanperati : -40°C ~ 150°C
Mounting Kalite : Chassis Mount
Pake / Ka : Module
Pake Aparèy Founisè : Module