IDB30E60ATMA1 Pricing (USD) [68077PC Stock]
- 1 pcs$0.57436
- 1,000 pcs$0.39206
- Nimewo Pati:
- IDB30E60ATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- DIODE GEN PURP 600V 52.3A TO263.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - IGBTs - Modil yo, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Single and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IDB30E60ATMA1 electronic components. IDB30E60ATMA1 can be shipped within 24 hours after order. If you have any demands for IDB30E60ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IDB30E60ATMA1 Atribi pwodwi yo
Nimewo Pati :
IDB30E60ATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
DIODE GEN PURP 600V 52.3A TO263
Seri :
-
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
52.3A (DC)
Voltage - Forward (Vf) (Max) @ Si :
2V @ 30A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
126ns
Kouran - Fèy Reverse @ Vr :
50µA @ 600V
Kapasite @ Vr, F :
-
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè :
PG-TO263-3-2
Operating Tanperati - Junction :
-40°C ~ 175°C
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