ISSI, Integrated Silicon Solution Inc - IS46DR16320E-3DBLA1

KEY Part #: K938113

IS46DR16320E-3DBLA1 Pricing (USD) [19236PC Stock]

  • 1 pcs$2.38216

Nimewo Pati:
IS46DR16320E-3DBLA1
Manifakti:
ISSI, Integrated Silicon Solution Inc
Detaye deskripsyon:
IC DRAM 512M PARALLEL 333MHZ. DRAM 512M 1.8V 32Mx16 Ext Temp DDR2
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: PMIC - Pouvwa sou Ethernet (PoE) regulateur, Entèfas - Espesyalize, Entèfas - Serializers, Deserializers, PMIC - contrôles cho echanj, Memwa - regulateur, Lojik - Multivibrators, Entèfas - Buffer siyal yo, Repeteur, Splitters and PMIC - Power Supply Controller, Monitè ...
Avantaj konpetitif:
We specialize in ISSI, Integrated Silicon Solution Inc IS46DR16320E-3DBLA1 electronic components. IS46DR16320E-3DBLA1 can be shipped within 24 hours after order. If you have any demands for IS46DR16320E-3DBLA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IS46DR16320E-3DBLA1 Atribi pwodwi yo

Nimewo Pati : IS46DR16320E-3DBLA1
Manifakti : ISSI, Integrated Silicon Solution Inc
Deskripsyon : IC DRAM 512M PARALLEL 333MHZ
Seri : -
Estati Pati : Active
Kalite memwa yo : Volatile
Fòma memwa : DRAM
Teknoloji : SDRAM - DDR2
Size memwa : 512Mb (32M x 16)
Frè frekans lan : 333MHz
Ekri Sik Tan - Pawòl, Page : 15ns
Tan aksè : 450ps
Entèfas memwa : Parallel
Voltage - Pwovizyon pou : 1.7V ~ 1.9V
Operating Tanperati : -40°C ~ 85°C (TA)
Mounting Kalite : Surface Mount
Pake / Ka : 84-TFBGA
Pake Aparèy Founisè : 84-WBGA (8x12.5)

Ou ka enterese tou
  • GD25S512MDFIGR

    GigaDevice Semiconductor (HK) Limited

    NOR FLASH.

  • 71V3576S150PFGI

    IDT, Integrated Device Technology Inc

    IC SRAM 4.5M PARALLEL 100TQFP.

  • 71V3577S75PFGI

    IDT, Integrated Device Technology Inc

    IC SRAM 4.5M PARALLEL 100TQFP. SRAM 4M 3.3V I/O PBSRAM SLOW X

  • TC58BYG2S0HBAI4

    Toshiba Memory America, Inc.

    4GB SLC BENAND 24NM BGA 9X11 EE. NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)

  • TC58BVG2S0HBAI4

    Toshiba Memory America, Inc.

    IC FLASH 4G PARALLEL 63TFBGA. NAND Flash 3.3V 4Gb 24nm SLC NAND (EEPROM)

  • TC58NVG2S0HBAI4

    Toshiba Memory America, Inc.

    IC FLASH 4G PARALLEL 63TFBGA. NAND Flash 3.3V 4Gb 24nm SLC NAND (EEPROM)