Deskripsyon :
IC MOSFET DRVR DUAL 4A 8-SOIC
Kondwi konte genyen :
Low-Side
Kalite Chèn :
Independent
Kalite Gate :
IGBT, N-Channel, P-Channel MOSFET
Voltage - Pwovizyon pou :
4.5V ~ 35V
Vòltaj lojik - VIL, VIH :
0.8V, 2.5V
Kouran - Peak Sòti (Sous, Lavabo) :
4A, 4A
Kalite Antre :
Non-Inverting
Segondè Voltage Side - Max (Bootstrap) :
-
Rise / Fall Time (Tip) :
16ns, 13ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SOIC