Vishay Semiconductor Diodes Division - S2BHE3_A/H

KEY Part #: K6426994

S2BHE3_A/H Pricing (USD) [789609PC Stock]

  • 1 pcs$0.04684
  • 4,500 pcs$0.04317

Nimewo Pati:
S2BHE3_A/H
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 100V 1.5A DO214AA. Rectifiers 1.5A, 100V, SMB GPP, STD, SM RECT
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Tiristors - DIACs, SIDACs, Diodes - Zener - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Pwogramasyon Unijunction, Diodes - Zener - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - Objektif espesyal ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division S2BHE3_A/H electronic components. S2BHE3_A/H can be shipped within 24 hours after order. If you have any demands for S2BHE3_A/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

S2BHE3_A/H Atribi pwodwi yo

Nimewo Pati : S2BHE3_A/H
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 100V 1.5A DO214AA
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 100V
Kouran - Mwayèn Rèktifye (Io) : 1.5A
Voltage - Forward (Vf) (Max) @ Si : 1.15V @ 1.5A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 2µs
Kouran - Fèy Reverse @ Vr : 1µA @ 100V
Kapasite @ Vr, F : 16pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AA, SMB
Pake Aparèy Founisè : DO-214AA (SMB)
Operating Tanperati - Junction : -55°C ~ 150°C

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