[2205PC Stock]
- Nimewo Pati:
- FDN338P_G
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- INTEGRATED CIRCUIT.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Diodes - Zener - Arrays, Diodes - Bridge rèktifikateur, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - RF, Tiristors - SCR, Transistors - Bipolè (BJT) - Single and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FDN338P_G electronic components. FDN338P_G can be shipped within 24 hours after order. If you have any demands for FDN338P_G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDN338P_G Atribi pwodwi yo
Nimewo Pati :
FDN338P_G
Manifakti :
ON Semiconductor
Deskripsyon :
INTEGRATED CIRCUIT
Seri :
PowerTrench®
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.6A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
115 mOhm @ 1.6A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
6.2nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
451pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
500mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SuperSOT-3
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
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