ON Semiconductor - FDN338P_G

KEY Part #: K6403878

[2205PC Stock]


    Nimewo Pati:
    FDN338P_G
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    INTEGRATED CIRCUIT.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - IGBTs - Single, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - RF, Diodes - RF, Tiristors - SCR and Transistors - FETs, MOSFETs - Arrays ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor FDN338P_G electronic components. FDN338P_G can be shipped within 24 hours after order. If you have any demands for FDN338P_G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FDN338P_G Atribi pwodwi yo

    Nimewo Pati : FDN338P_G
    Manifakti : ON Semiconductor
    Deskripsyon : INTEGRATED CIRCUIT
    Seri : PowerTrench®
    Estati Pati : Obsolete
    FET Kalite : P-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 20V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.6A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
    RD sou (Max) @ Id, Vgs : 115 mOhm @ 1.6A, 4.5V
    Vgs (th) (Max) @ Id : 1.5V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 6.2nC @ 4.5V
    Vgs (Max) : ±8V
    Antre kapasite (Ciss) (Max) @ Vds : 451pF @ 10V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 500mW (Ta)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : SuperSOT-3
    Pake / Ka : TO-236-3, SC-59, SOT-23-3

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