Taiwan Semiconductor Corporation - HERAF1006G C0G

KEY Part #: K6428406

HERAF1006G C0G Pricing (USD) [280423PC Stock]

  • 1 pcs$0.13190

Nimewo Pati:
HERAF1006G C0G
Manifakti:
Taiwan Semiconductor Corporation
Detaye deskripsyon:
DIODE GEN PURP 600V 10A ITO220AC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Arrays, Modil pouvwa chofè, Diodes - Zener - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Objektif espesyal and Diodes - RF ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

HERAF1006G C0G Atribi pwodwi yo

Nimewo Pati : HERAF1006G C0G
Manifakti : Taiwan Semiconductor Corporation
Deskripsyon : DIODE GEN PURP 600V 10A ITO220AC
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 10A
Voltage - Forward (Vf) (Max) @ Si : 1.7V @ 10A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 80ns
Kouran - Fèy Reverse @ Vr : 10µA @ 600V
Kapasite @ Vr, F : 60pF @ 4V, 1MHz
Mounting Kalite : Through Hole
Pake / Ka : TO-220-2 Full Pack
Pake Aparèy Founisè : ITO-220AC
Operating Tanperati - Junction : -55°C ~ 150°C

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