Manifakti :
Microsemi Corporation
Deskripsyon :
DIODE GEN PURP 50V 300MA DO213AA
Voltage - DC Ranvèse (Vr) (Max) :
50V
Kouran - Mwayèn Rèktifye (Io) :
300mA
Voltage - Forward (Vf) (Max) @ Si :
680mV @ 10mA
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
4ns
Kouran - Fèy Reverse @ Vr :
100nA @ 50V
Kapasite @ Vr, F :
2.5pF @ 0V, 1MHz
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DO-213AA
Operating Tanperati - Junction :
-65°C ~ 175°C