[20168PC Stock]
- Nimewo Pati:
- K4A4G085WE-BITD
- Manifakti:
- Samsung Semiconductor
- Detaye deskripsyon:
- 4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: LPDDR5, LPDDR3, HBM Flarebolt, HBM Aquabolt, GDDR6, SLC Nand, DDR3 and MODULE ...
- Avantaj konpetitif:
- We specialize in Samsung Semiconductor K4A4G085WE-BITD electronic components. K4A4G085WE-BITD can be shipped within 24 hours after order. If you have any demands for K4A4G085WE-BITD, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
K4A4G085WE-BITD Atribi pwodwi yo
Nimewo Pati :
K4A4G085WE-BITD
Manifakti :
Samsung Semiconductor
Deskripsyon :
4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production
Seri :
DDR4
dansite :
4 Gb
Org. :
512M x 8
vitès :
2666 Mbps
Voltage :
1.2 V
Tanperatur. :
-40 ~ 95 °C
Pake :
78FBGA
pwodwi dènye nouvèl :
Mass Production
Dènye nouvèl
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K4A4G085WE-BITD
Samsung Semiconductor
4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.
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