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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

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  1. Lakay
  2. Pwodwi yo
  3. DRAM
  4. DDR4
  5. K4ABG165WA-MCWE

Samsung Semiconductor - K4ABG165WA-MCWE

KEY Part #: K7359579

[22057PC Stock]

    Nimewo Pati:
    K4ABG165WA-MCWE
    Manifakti:
    Samsung Semiconductor
    Detaye deskripsyon:
    32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: GDDR5, LPDDR4X, LPDDR4, HBM Aquabolt, DDR3, SLC Nand, HBM Flarebolt and LPDDR3 ...
    Avantaj konpetitif:
    We specialize in Samsung Semiconductor K4ABG165WA-MCWE electronic components. K4ABG165WA-MCWE can be shipped within 24 hours after order. If you have any demands for K4ABG165WA-MCWE, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4ABG165WA-MCWE Atribi pwodwi yo

    Nimewo Pati : K4ABG165WA-MCWE
    Manifakti : Samsung Semiconductor
    Deskripsyon : 32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample
    Seri : DDR4
    dansite : 32 Gb
    Org. : 2G x 16
    vitès : 3200 Mbps
    Voltage : 1.2 V
    Tanperatur. : 0 ~ 85 °C
    Pake : 96FBGA
    pwodwi dènye nouvèl : Sample

    Dènye nouvèl

    Driving the Artificial Intelligence Evolution with In-Memory Computing
    Evolving Mobile Solutions: Samsung at MWC 2018
    Bringing Artificial Intelligence to Devices Everywhere
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    Unlocking the Power of Cloud Computing
    Samsung’s PM1733 SSD and High Density DIMMs Support AMD EPYC™ 7002 Series Processor
    Mission Peak Reference Server System for NGSFF SSD
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    How Will 5G Impact on Memory?
    Speed for the next generation of mobile devices
    Ou ka enterese tou
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      32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

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    • K4A4G085WF-BITD

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      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

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      4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.

    Pati cho