Infineon Technologies - FD1200R17KE3KNOSA1

KEY Part #: K6533503

FD1200R17KE3KNOSA1 Pricing (USD) [92PC Stock]

  • 1 pcs$389.13889

Nimewo Pati:
FD1200R17KE3KNOSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MODULE IGBT IHM130-2.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - RF, Diodes - Zener - Single, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - RF, Modil pouvwa chofè, Tiristors - TRIACs and Transistors - FETs, MOSFETs - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FD1200R17KE3KNOSA1 Atribi pwodwi yo

Nimewo Pati : FD1200R17KE3KNOSA1
Manifakti : Infineon Technologies
Deskripsyon : MODULE IGBT IHM130-2
Seri : -
Estati Pati : Not For New Designs
Kalite IGBT : -
Nou konte genyen : Dual Brake Chopper
Voltage - Pèseptè ki emèt deba (Max) : 1700V
Kouran - Pèseptè (Ic) (Max) : 1600A
Pouvwa - Max : 5950W
Vce (sou) (Max) @ Vge, Ic : 2.45V @ 15V, 1200A
Kouran - Cutoff Pèseptè (Max) : 5mA
Antre kapasite (Cies) @ Vce : 110nF @ 25V
Antre : Standard
NTC thermistor : No
Operating Tanperati : -40°C ~ 125°C
Mounting Kalite : Chassis Mount
Pake / Ka : Module
Pake Aparèy Founisè : Module

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