Microsemi Corporation - APTGT200A120G

KEY Part #: K6533594

APTGT200A120G Pricing (USD) [766PC Stock]

  • 1 pcs$81.28723
  • 10 pcs$77.36084
  • 25 pcs$74.55792

Nimewo Pati:
APTGT200A120G
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
POWER MODULE IGBT 1200V 200A SP6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - Objektif espesyal, Transistors - IGBTs - Arrays, Tiristors - DIACs, SIDACs, Diodes - RF, Transistors - Pwogramasyon Unijunction, Diodes - Zener - Arrays and Transistors - IGBTs - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTGT200A120G Atribi pwodwi yo

Nimewo Pati : APTGT200A120G
Manifakti : Microsemi Corporation
Deskripsyon : POWER MODULE IGBT 1200V 200A SP6
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Nou konte genyen : Half Bridge
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 280A
Pouvwa - Max : 890W
Vce (sou) (Max) @ Vge, Ic : 2.1V @ 15V, 200A
Kouran - Cutoff Pèseptè (Max) : 350µA
Antre kapasite (Cies) @ Vce : 14nF @ 25V
Antre : Standard
NTC thermistor : No
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : SP6
Pake Aparèy Founisè : SP6

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