Vishay Semiconductor Diodes Division - BAS281-GS18

KEY Part #: K6458538

BAS281-GS18 Pricing (USD) [2037504PC Stock]

  • 1 pcs$0.01916
  • 10,000 pcs$0.01906

Nimewo Pati:
BAS281-GS18
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE SCHOTTKY 40V 30MA SOD80. Schottky Diodes & Rectifiers 40 Volt 30mA 500mA IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Single, Transistors - JFETs, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Tiristors - SCR ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BAS281-GS18 electronic components. BAS281-GS18 can be shipped within 24 hours after order. If you have any demands for BAS281-GS18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAS281-GS18 Atribi pwodwi yo

Nimewo Pati : BAS281-GS18
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE SCHOTTKY 40V 30MA SOD80
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 40V
Kouran - Mwayèn Rèktifye (Io) : 30mA
Voltage - Forward (Vf) (Max) @ Si : 1V @ 15mA
Vitès : Small Signal =< 200mA (Io), Any Speed
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 200nA @ 200V
Kapasite @ Vr, F : 1.6pF @ 1V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : SOD-80 Variant
Pake Aparèy Founisè : SOD-80 QuadroMELF
Operating Tanperati - Junction : 125°C (Max)

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