BAT82S-TR Pricing (USD) [2079178PC Stock]
- 1 pcs$0.01779
- 50,000 pcs$0.01620
- Nimewo Pati:
- BAT82S-TR
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE SCHOTTKY 50V 30MA DO35. Schottky Diodes & Rectifiers 150mA 50 Volt 500mA IFSM
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Single, Tiristors - DIACs, SIDACs, Tiristors - SCR - Modil yo, Transistors - Objektif espesyal, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Arrays and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division BAT82S-TR electronic components. BAT82S-TR can be shipped within 24 hours after order. If you have any demands for BAT82S-TR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BAT82S-TR Atribi pwodwi yo
Nimewo Pati :
BAT82S-TR
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE SCHOTTKY 50V 30MA DO35
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
Kalite dyòd :
Schottky
Voltage - DC Ranvèse (Vr) (Max) :
50V
Kouran - Mwayèn Rèktifye (Io) :
30mA (DC)
Voltage - Forward (Vf) (Max) @ Si :
1V @ 15mA
Vitès :
Small Signal =< 200mA (Io), Any Speed
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
200nA @ 50V
Kapasite @ Vr, F :
1.6pF @ 1V, 1MHz
Mounting Kalite :
Through Hole
Pake / Ka :
DO-204AH, DO-35, Axial
Pake Aparèy Founisè :
DO-35
Operating Tanperati - Junction :
125°C (Max)
Dènye nouvèl
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