TK4R4P06PL,RQ Pricing (USD) [146492PC Stock]
- 1 pcs$0.25249
- Nimewo Pati:
- TK4R4P06PL,RQ
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N-CHANNEL 60V 58A DPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - IGBTs - Arrays, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - RF, Transistors - Objektif espesyal, Diodes - Rèkteur - Arrays, Tiristors - SCR - Modil yo and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TK4R4P06PL,RQ electronic components. TK4R4P06PL,RQ can be shipped within 24 hours after order. If you have any demands for TK4R4P06PL,RQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK4R4P06PL,RQ Atribi pwodwi yo
Nimewo Pati :
TK4R4P06PL,RQ
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CHANNEL 60V 58A DPAK
Seri :
U-MOSIX-H
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
58A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
4.4 mOhm @ 29A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 500µA
Chaje Gate (Qg) (Max) @ Vgs :
48.2nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
3280pF @ 30V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
87W (Tc)
Operating Tanperati :
175°C
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DPAK
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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