Renesas Electronics America - RJK0301DPB-02#J0

KEY Part #: K6418999

RJK0301DPB-02#J0 Pricing (USD) [86753PC Stock]

  • 1 pcs$0.48047
  • 2,500 pcs$0.47808

Nimewo Pati:
RJK0301DPB-02#J0
Manifakti:
Renesas Electronics America
Detaye deskripsyon:
MOSFET N-CH 30V 60A 5-LFPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single, Tiristors - SCR, Transistors - IGBTs - Modil yo, Modil pouvwa chofè, Transistors - IGBTs - Single, Tiristors - SCR - Modil yo and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Renesas Electronics America RJK0301DPB-02#J0 electronic components. RJK0301DPB-02#J0 can be shipped within 24 hours after order. If you have any demands for RJK0301DPB-02#J0, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RJK0301DPB-02#J0 Atribi pwodwi yo

Nimewo Pati : RJK0301DPB-02#J0
Manifakti : Renesas Electronics America
Deskripsyon : MOSFET N-CH 30V 60A 5-LFPAK
Seri : -
Estati Pati : Not For New Designs
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 60A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 2.8 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : 32nC @ 4.5V
Vgs (Max) : +16V, -12V
Antre kapasite (Ciss) (Max) @ Vds : 5000pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 65W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 5-LFPAK
Pake / Ka : SC-100, SOT-669