Manifakti :
GeneSiC Semiconductor
Deskripsyon :
DIODE SCHOTTKY 30V 35A DO4
Voltage - DC Ranvèse (Vr) (Max) :
30V
Kouran - Mwayèn Rèktifye (Io) :
35A
Voltage - Forward (Vf) (Max) @ Si :
680mV @ 35A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
1.5mA @ 20V
Mounting Kalite :
Chassis, Stud Mount
Pake / Ka :
DO-203AA, DO-4, Stud
Pake Aparèy Founisè :
DO-4
Operating Tanperati - Junction :
-55°C ~ 150°C