HGTD7N60C3S9A Pricing (USD) [102687PC Stock]
- 1 pcs$0.38078
- 2,500 pcs$0.34557
- Nimewo Pati:
- HGTD7N60C3S9A
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- IGBT 600V 14A 60W TO252AA.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Arrays and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor HGTD7N60C3S9A electronic components. HGTD7N60C3S9A can be shipped within 24 hours after order. If you have any demands for HGTD7N60C3S9A, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HGTD7N60C3S9A Atribi pwodwi yo
Nimewo Pati :
HGTD7N60C3S9A
Manifakti :
ON Semiconductor
Deskripsyon :
IGBT 600V 14A 60W TO252AA
Seri :
-
Estati Pati :
Not For New Designs
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
14A
Kouran - Pèseptè batman (Icm) :
56A
Vce (sou) (Max) @ Vge, Ic :
2V @ 15V, 7A
Pouvwa - Max :
60W
Oblije chanje enèji :
165µJ (on), 600µJ (off)
Kalite Antre :
Standard
Gate chaje :
23nC
Td (on / off) @ 25 ° C :
-
Kondisyon egzamen an :
-
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè :
TO-252AA
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