IXYS - IXTA5N50P

KEY Part #: K6418539

IXTA5N50P Pricing (USD) [68015PC Stock]

  • 1 pcs$0.66441
  • 50 pcs$0.66110

Nimewo Pati:
IXTA5N50P
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 500V 4.8A D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Diodes - Rèkteur - Single, Diodes - Rèkteur - Arrays, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in IXYS IXTA5N50P electronic components. IXTA5N50P can be shipped within 24 hours after order. If you have any demands for IXTA5N50P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTA5N50P Atribi pwodwi yo

Nimewo Pati : IXTA5N50P
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 500V 4.8A D2PAK
Seri : PolarHV™
Estati Pati : Last Time Buy
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.8A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 1.4 Ohm @ 2.4A, 10V
Vgs (th) (Max) @ Id : 5.5V @ 50µA
Chaje Gate (Qg) (Max) @ Vgs : 12.6nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 620pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 89W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-263 (IXTA)
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB