GeneSiC Semiconductor - MBR2X080A120

KEY Part #: K6468635

MBR2X080A120 Pricing (USD) [3020PC Stock]

  • 1 pcs$14.34242
  • 40 pcs$8.96231

Nimewo Pati:
MBR2X080A120
Manifakti:
GeneSiC Semiconductor
Detaye deskripsyon:
DIODE SCHOTTKY 120V 80A SOT227. Schottky Diodes & Rectifiers 120V 160A Fwd Schottky
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - RF, Diodes - Bridge rèktifikateur, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Modil pouvwa chofè, Diodes - RF and Transistors - JFETs ...
Avantaj konpetitif:
We specialize in GeneSiC Semiconductor MBR2X080A120 electronic components. MBR2X080A120 can be shipped within 24 hours after order. If you have any demands for MBR2X080A120, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MBR2X080A120 Atribi pwodwi yo

Nimewo Pati : MBR2X080A120
Manifakti : GeneSiC Semiconductor
Deskripsyon : DIODE SCHOTTKY 120V 80A SOT227
Seri : -
Estati Pati : Active
Konfigirasyon dyòd : 2 Independent
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 120V
Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) : 80A
Voltage - Forward (Vf) (Max) @ Si : 880mV @ 80A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 3mA @ 120V
Operating Tanperati - Junction : -40°C ~ 150°C
Mounting Kalite : Chassis Mount
Pake / Ka : SOT-227-4, miniBLOC
Pake Aparèy Founisè : SOT-227
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