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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NTMFS4897NFT1G

ON Semiconductor - NTMFS4897NFT1G

KEY Part #: K6397298

NTMFS4897NFT1G Pricing (USD) [106606PC Stock]

  • 1 pcs$0.34869
  • 1,500 pcs$0.34695
Nimewo Pati:
NTMFS4897NFT1G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 30V SO-8FL.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs, Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur, Tiristors - DIACs, SIDACs and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
We specialize in ON Semiconductor NTMFS4897NFT1G electronic components. NTMFS4897NFT1G can be shipped within 24 hours after order. If you have any demands for NTMFS4897NFT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTMFS4897NFT1G Atribi pwodwi yo

Nimewo Pati : NTMFS4897NFT1G
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 30V SO-8FL
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 17A (Ta), 171A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 2 mOhm @ 22A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 83.6nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 5660pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 950mW (Ta), 96.2W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 5-DFN (5x6) (8-SOFL)
Pake / Ka : 8-PowerTDFN, 5 Leads

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