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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FDP150N10

ON Semiconductor - FDP150N10

KEY Part #: K6403041

FDP150N10 Pricing (USD) [36819PC Stock]

  • 1 pcs$1.04525
  • 10 pcs$0.94574
  • 100 pcs$0.75994
  • 500 pcs$0.59108
  • 1,000 pcs$0.48975
Nimewo Pati:
FDP150N10
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 100V 57A TO-220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Modil pouvwa chofè, Diodes - Rèkteur - Single and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDP150N10 electronic components. FDP150N10 can be shipped within 24 hours after order. If you have any demands for FDP150N10, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDP150N10 Atribi pwodwi yo

Nimewo Pati : FDP150N10
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 100V 57A TO-220
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 57A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 15 mOhm @ 49A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 69nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 4760pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 110W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220-3
Pake / Ka : TO-220-3

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