[9347PC Stock]
- Nimewo Pati:
- FGA25N120ANDTU
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- IGBT 1200V 40A 310W TO3P.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Transistors - JFETs, Modil pouvwa chofè, Tiristors - TRIACs and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FGA25N120ANDTU electronic components. FGA25N120ANDTU can be shipped within 24 hours after order. If you have any demands for FGA25N120ANDTU, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FGA25N120ANDTU Atribi pwodwi yo
Nimewo Pati :
FGA25N120ANDTU
Manifakti :
ON Semiconductor
Deskripsyon :
IGBT 1200V 40A 310W TO3P
Seri :
-
Estati Pati :
Obsolete
Kalite IGBT :
NPT
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
40A
Kouran - Pèseptè batman (Icm) :
75A
Vce (sou) (Max) @ Vge, Ic :
3.2V @ 15V, 25A
Pouvwa - Max :
310W
Oblije chanje enèji :
4.8mJ (on), 1mJ (off)
Kalite Antre :
Standard
Gate chaje :
200nC
Td (on / off) @ 25 ° C :
60ns/170ns
Kondisyon egzamen an :
600V, 25A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) :
350ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-3P-3, SC-65-3
Pake Aparèy Founisè :
TO-3P
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