Infineon Technologies - SGB20N60ATMA1

KEY Part #: K6423897

[9495PC Stock]


    Nimewo Pati:
    SGB20N60ATMA1
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    IGBT 600V 40A 179W TO263-3.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Objektif espesyal, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Modil yo and Diodes - RF ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies SGB20N60ATMA1 electronic components. SGB20N60ATMA1 can be shipped within 24 hours after order. If you have any demands for SGB20N60ATMA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SGB20N60ATMA1 Atribi pwodwi yo

    Nimewo Pati : SGB20N60ATMA1
    Manifakti : Infineon Technologies
    Deskripsyon : IGBT 600V 40A 179W TO263-3
    Seri : -
    Estati Pati : Obsolete
    Kalite IGBT : NPT
    Voltage - Pèseptè ki emèt deba (Max) : 600V
    Kouran - Pèseptè (Ic) (Max) : 40A
    Kouran - Pèseptè batman (Icm) : 80A
    Vce (sou) (Max) @ Vge, Ic : 2.4V @ 15V, 20A
    Pouvwa - Max : 179W
    Oblije chanje enèji : 440µJ (on), 330µJ (off)
    Kalite Antre : Standard
    Gate chaje : 100nC
    Td (on / off) @ 25 ° C : 36ns/225ns
    Kondisyon egzamen an : 400V, 20A, 16 Ohm, 15V
    Ranvèse Tan Reverse (trr) : -
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    Pake Aparèy Founisè : PG-TO263-3