IRFH5302DTRPBF Pricing (USD) [97261PC Stock]
- 1 pcs$0.40202
- 4,000 pcs$0.38594
- Nimewo Pati:
- IRFH5302DTRPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 30V 29A 8VQFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Single, Transistors - JFETs, Modil pouvwa chofè, Transistors - IGBTs - Modil yo, Tiristors - TRIACs and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFH5302DTRPBF electronic components. IRFH5302DTRPBF can be shipped within 24 hours after order. If you have any demands for IRFH5302DTRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH5302DTRPBF Atribi pwodwi yo
Nimewo Pati :
IRFH5302DTRPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 30V 29A 8VQFN
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
29A (Ta), 100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
2.5 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
2.35V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
55nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
3635pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.6W (Ta), 104W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PQFN (5x6) Single Die
Pake / Ka :
8-PowerVDFN
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