[7369PC Stock]
- Nimewo Pati:
- 1N4935GP-M3/54
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 200V 1A DO204AL.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Single, Tiristors - SCR - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division 1N4935GP-M3/54 electronic components. 1N4935GP-M3/54 can be shipped within 24 hours after order. If you have any demands for 1N4935GP-M3/54, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1N4935GP-M3/54 Atribi pwodwi yo
Nimewo Pati :
1N4935GP-M3/54
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 200V 1A DO204AL
Seri :
Automotive, AEC-Q101
Estati Pati :
Obsolete
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
200V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
1.2V @ 1A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
200ns
Kouran - Fèy Reverse @ Vr :
5µA @ 200V
Kapasite @ Vr, F :
15pF @ 4V, 1MHz
Mounting Kalite :
Through Hole
Pake / Ka :
DO-204AL, DO-41, Axial
Pake Aparèy Founisè :
DO-204AL (DO-41)
Operating Tanperati - Junction :
-65°C ~ 175°C
Dènye nouvèl
Ou ka enterese tou
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VS-8EWS08S-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 800V 8A TO252AA. Rectifiers New Input Diodes - D-PAK-e3
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