Microsemi Corporation - JANTX1N6629US

KEY Part #: K6448057

Kategori Fanmi yo:: KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - Objektif espesyal, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Single, Modil pouvwa chofè, Tiristors - SCR - Modil yo and Diodes - Bridge rèktifikateur ...

Avantaj konpetitif:: We specialize in Microsemi Corporation JANTX1N6629US electronic components. JANTX1N6629US can be shipped within 24 hours after order. If you have any demands for JANTX1N6629US, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

Nimewo Pati : JANTX1N6629US

Manifakti : Microsemi Corporation

Deskripsyon : DIODE GEN PURP 880V 1.4A D5B

Seri : Military, MIL-PRF-19500/590

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 880V

Kouran - Mwayèn Rèktifye (Io) : 1.4A

Voltage - Forward (Vf) (Max) @ Si : 1.4V @ 1.4A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 50ns

Kouran - Fèy Reverse @ Vr : 2µA @ 880V

Kapasite @ Vr, F : 40pF @ 10V, 1MHz

Mounting Kalite : Surface Mount

Pake / Ka : SQ-MELF, E

Pake Aparèy Founisè : D-5B

Operating Tanperati - Junction : -65°C ~ 150°C

Ou ka enterese tou

GPP60GHE3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 6A P600.
GPP60DHE3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 6A P600.
GPP60D-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 6A P600.
GPP60BHE3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 6A P600.
GPP60AHE3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 6A P600.
GPP60A-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 6A P600.

Pati cho