Nimewo Pati :
IDH10G65C6XKSA1
Manifakti :
Infineon Technologies
Deskripsyon :
DIODE SCHOTTKY 650V 24A TO220-2
Kalite dyòd :
Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) :
650V
Kouran - Mwayèn Rèktifye (Io) :
24A (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.35V @ 10A
Vitès :
No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) :
0ns
Kouran - Fèy Reverse @ Vr :
33µA @ 420V
Kapasite @ Vr, F :
495pF @ 1V, 1MHz
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PG-TO220-2
Operating Tanperati - Junction :
-55°C ~ 175°C