APT20M38BVRG Pricing (USD) [7878PC Stock]
- 1 pcs$5.78266
- 40 pcs$5.75389
- Nimewo Pati:
- APT20M38BVRG
- Manifakti:
- Microsemi Corporation
- Detaye deskripsyon:
- MOSFET N-CH 200V 67A TO-247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Diodes - RF, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Single, Diodes - Zener - Single, Transistors - Objektif espesyal, Tiristors - DIACs, SIDACs and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Microsemi Corporation APT20M38BVRG electronic components. APT20M38BVRG can be shipped within 24 hours after order. If you have any demands for APT20M38BVRG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APT20M38BVRG Atribi pwodwi yo
Nimewo Pati :
APT20M38BVRG
Manifakti :
Microsemi Corporation
Deskripsyon :
MOSFET N-CH 200V 67A TO-247
Seri :
POWER MOS V®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
67A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
38 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
225nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
6120pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
370W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247 [B]
Pake / Ka :
TO-247-3
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