Infineon Technologies - IKD04N60RFAATMA1

KEY Part #: K6424950

IKD04N60RFAATMA1 Pricing (USD) [139363PC Stock]

  • 1 pcs$0.26540
  • 2,500 pcs$0.26377

Nimewo Pati:
IKD04N60RFAATMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT 600V 8A 75W TO252-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Tiristors - DIACs, SIDACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Arrays, Modil pouvwa chofè, Transistors - JFETs and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in Infineon Technologies IKD04N60RFAATMA1 electronic components. IKD04N60RFAATMA1 can be shipped within 24 hours after order. If you have any demands for IKD04N60RFAATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IKD04N60RFAATMA1 Atribi pwodwi yo

Nimewo Pati : IKD04N60RFAATMA1
Manifakti : Infineon Technologies
Deskripsyon : IGBT 600V 8A 75W TO252-3
Seri : Automotive, AEC-Q101, TrenchStop™
Estati Pati : Not For New Designs
Kalite IGBT : Trench
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 8A
Kouran - Pèseptè batman (Icm) : 12A
Vce (sou) (Max) @ Vge, Ic : 2.5V @ 15V, 4A
Pouvwa - Max : 75W
Oblije chanje enèji : 60µJ (on), 50µJ (off)
Kalite Antre : Standard
Gate chaje : 27nC
Td (on / off) @ 25 ° C : 12ns/116ns
Kondisyon egzamen an : 400V, 4A, 43 Ohm, 15V
Ranvèse Tan Reverse (trr) : 34ns
Operating Tanperati : -40°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè : PG-TO252-3