Infineon Technologies - IRG4BC30FD1PBF

KEY Part #: K6424433

IRG4BC30FD1PBF Pricing (USD) [9310PC Stock]

  • 1 pcs$1.64381
  • 10 pcs$1.47767
  • 100 pcs$1.21065
  • 500 pcs$0.97776
  • 1,000 pcs$0.82462

Nimewo Pati:
IRG4BC30FD1PBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT 600V 31A 100W TO220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Arrays, Transistors - Objektif espesyal, Modil pouvwa chofè, Diodes - Rèkteur - Single, Transistors - IGBTs - Single and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in Infineon Technologies IRG4BC30FD1PBF electronic components. IRG4BC30FD1PBF can be shipped within 24 hours after order. If you have any demands for IRG4BC30FD1PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRG4BC30FD1PBF Atribi pwodwi yo

Nimewo Pati : IRG4BC30FD1PBF
Manifakti : Infineon Technologies
Deskripsyon : IGBT 600V 31A 100W TO220AB
Seri : -
Estati Pati : Obsolete
Kalite IGBT : -
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 31A
Kouran - Pèseptè batman (Icm) : 124A
Vce (sou) (Max) @ Vge, Ic : 1.8V @ 15V, 17A
Pouvwa - Max : 100W
Oblije chanje enèji : 370µJ (on), 1.42mJ (off)
Kalite Antre : Standard
Gate chaje : 57nC
Td (on / off) @ 25 ° C : 22ns/250ns
Kondisyon egzamen an : 480V, 17A, 23 Ohm, 15V
Ranvèse Tan Reverse (trr) : 46ns
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-220-3
Pake Aparèy Founisè : TO-220AB