Nimewo Pati :
CUS01(TE85L,Q,M)
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
DIODE SCHOTTKY 30V 1A USFLAT
Voltage - DC Ranvèse (Vr) (Max) :
30V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
390mV @ 1A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
1.5mA @ 30V
Mounting Kalite :
Surface Mount
Pake / Ka :
SC-76, SOD-323
Pake Aparèy Founisè :
US-FLAT (1.25x2.5)
Operating Tanperati - Junction :
-40°C ~ 125°C