ON Semiconductor - ISL9N302AS3ST

KEY Part #: K6410221

[11PC Stock]


    Nimewo Pati:
    ISL9N302AS3ST
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET N-CH 30V 75A D2PAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR - Modil yo, Tiristors - DIACs, SIDACs, Diodes - Bridge rèktifikateur and Diodes - Zener - Arrays ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor ISL9N302AS3ST electronic components. ISL9N302AS3ST can be shipped within 24 hours after order. If you have any demands for ISL9N302AS3ST, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    ISL9N302AS3ST Atribi pwodwi yo

    Nimewo Pati : ISL9N302AS3ST
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET N-CH 30V 75A D2PAK
    Seri : UltraFET™
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 75A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 2.3 mOhm @ 75A, 10V
    Vgs (th) (Max) @ Id : 3V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 300nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 11000pF @ 15V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 345W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : D²PAK (TO-263AB)
    Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB